Dosimetric response evaluation and structural characterization of (SnO)<sub>x</sub>(TiO<sub>2</sub>)<sub>1-x</sub> thin film for gamma radiation detection and measurement

Dosimetric response evaluation as well as structural Characterization of (SnO)x(TiO2)1-x was successfully carried out using the aerosol-assisted chemical vapor deposition method. This research aimed to ascertain how X-ray radiation affected the (SnO2)x(TiO2)1-x thin film's I-V characteristics induced current for the range (for x = 0.0, 0.3, and 0.5) in a voltage range of 0 to 8 V. The method used for developing the manufactured (SnO2)x(TiO2)1-x thin films was aerosol assisted chemical vapour deposition. To evaluate the dosimetric response, three thin film samples with a homogeneous distribution were developed, evaluated, and analyzed. The XRD result revealed peaks that corresponded to SnO2 and TiO2, as well as the films' amorphous nature. With an increase in SnO2 concentration, FESEM pictures show a reduction in crystalline size and film roughness. The thin film samples' cross-sectional FESEM image shows that the film thicknesses for TiO2, (SnO2)0.3(TiO2)0.7, (SnO2)0.5(TiO2)0.5, and thin film are 2.33 μm, 2.73 μm, and 10.84 μm, respectively. The results of the I-V characteristics showed that electrical conductivity increased between 0 and 8 V. During irradiation with X-ray dosage (dose rate) ranging from 100 cGy (250 cGy/min) to 200 cGy (350 cGy/min) and a voltage range of 1.0 V to 8.0 V, the I-V characteristic measurements were obtained for all the thin film sensors. The current increases linearly with X-ray doses and dose rate for all thin-film sensors that are prepared for all the applied voltage. The thin films exhibit values of sensitivity (minimum detectable dose) between 7.12 x 10-2 and 2.74 x 10-3 mA.cm-2.Gy-1 (1.41 x 102 - 3.65 x 105 mGy). The thin film material is an essential dosimetric material because this work demonstrated that X-ray radiation could lead to changes in microstructures.