WO3 thin films grown on Si substrates: potential high Tc ferromagnetic semiconductors

Abstract Well-defined ferromagnetism (FM) with a very high Tc of about 800 K was found in laser-ablated WO 3 films grown on Si wafer substrates. It seems that the observed magnetism is surface related, and oxygen vacancies might play an important role in inducing FM into these oxide semiconductors. The very high Tc FM is observed for the first time in nanosized-WO 3 , indicating a great potential for spintronic applications.

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Publication Details

Journal
Applied Physics A
Published
2024-11-08
DOI
https://doi.org/10.1007/s00339-024-08038-w
Citations
2
Primary Topic
ZnO doping and properties
Type
article
Field-Weighted Citation Impact
0.23

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article

WO3 thin films grown on Si substrates: potential high Tc ferromagnetic semiconductors

Nguyen Sy Pham, Nguyen Hoa Hong
2 citations
Applied Physics A
ZnO doping and properties
0.23
article

WO3 thin films grown on Si substrates: potential high Tc ferromagnetic semiconductors

Nguyen Sy Pham, Nguyen Hoa Hong
article en
2 citations

Abstract

Abstract Well-defined ferromagnetism (FM) with a very high Tc of about 800 K was found in laser-ablated WO 3 films grown on Si wafer substrates. It seems that the observed magnetism is surface related, and oxygen vacancies might play an important role in inducing FM into these oxide semiconductors. The very high Tc FM is observed for the first time in nanosized-WO 3 , indicating a great potential for spintronic applications.

Applied Physics AVol. 130(12)
Masaryk University (CZ)
Ministerstvo Školství, Mládeže a Tělovýchovy, Grantová Agentura České Republiky, Central European Institute of Technology
Openalex Percentile: Top 50%
ZnO doping and properties
0.23
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