High-performance optoelectronic devices based on TeOx nanowires: synthesis, characterization and photodetection

Low-dimensional nanomaterials have garnered significant interest for their unique electronic and optical properties, which are essential for advancing next-generation optoelectronic devices. Among these, tellurium suboxide (TeO x )-based nanowires (NWs), with their quasi-one-dimensional (1D) structure, offer distinct advantages in terms of charge transport and light absorption. In this study, we present a comprehensive investigation into the controlled synthesis, structural properties, and optoelectronic performance of TeO x nanowires. Nanowires were synthesized via chemical vapor deposition process and exhibited a high aspect ratio with excellent structural quality, confirmed through Raman spectroscopy, scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The TeO x nanowires demonstrated high crystallinity, smooth surface morphology, and consistent growth across the substrate, making them suitable for scalable device fabrication. The optoelectronic characterization of a fabricated photodetector, based on a single TeO x nanowire, revealed remarkable photoresponsivity and stability across a broad range of light intensities. These findings position TeO x nanowires as promising candidates for future optoelectronic devices such as photodetectors and optical sensors.