The BAF complex enhances transcription through interaction with H3K56ac in the histone globular domain
Histone post-translational modifications play pivotal roles in eukaryotic gene expression. To date, most studies have focused on modifications in unstructured histone N-terminal tail domains and their binding proteins. However, transcriptional regulation by chromatin-effector proteins that directly recognize modifications in histone globular domains has yet to be clearly demonstrated, despite the richness of their multiple modifications. Here, we show that the ATP-dependent chromatin-remodeling BAF complex stimulates p53-dependent transcription through direct interaction with H3K56ac located on the lateral surface of the histone globular domain. Mechanistically, the BAF complex recognizes nucleosomal H3K56ac via the DPF domain in the DPF2 subunit and exhibits enhanced nucleosome-remodeling activity in the presence of H3K56ac. We further demonstrate that a defect in H3K56ac-BAF complex interaction leads to impaired p53-dependent gene expression and DNA damage responses. Our study provides direct evidence that histone globular domain modifications participate in the regulation of gene expression.
Authors
- Robert G. Roeder (ORCID: https://orcid.org/0000-0003-3865-8572)
- Hyoungmin Kim (ORCID: https://orcid.org/0000-0002-4500-9653)
- Hee‐Sung Park (ORCID: https://orcid.org/0000-0001-8645-0405)
- Jihye Ahn
- Kwangbeom Hyun (ORCID: https://orcid.org/0000-0002-2377-3642)
- J. Eugene Lee
- Jaehoon Kim (ORCID: https://orcid.org/0000-0003-4035-0438)
- Yong‐In Kim (ORCID: https://orcid.org/0000-0002-2877-5110)
- Jihyun Kim (ORCID: https://orcid.org/0000-0002-4292-1911)
Institutions
- Korea Advanced Institute of Science and Technology (KR)
- Korea Research Institute of Standards and Science (KR)
- Rockefeller University (US)
Publication Details
- Journal
- Nature Communications
- Published
- 2024-11-07
- DOI
- https://doi.org/10.1038/s41467-024-53981-0
- Citations
- 9
- Primary Topic
- Protein Degradation and Inhibitors
- Type
- article
- Field-Weighted Citation Impact
- 2.10
Funders
- National Research Foundation
- National Research Foundation of Korea
- Samsung Science and Technology Foundation
- Samsung