Strength gradient in impact-induced metallic bonding
Solid-state bonding can form when metallic microparticles impact metallic substrates at supersonic velocities. While the conditions necessary for impact-induced metallic bonding are relatively well understood, the properties emerging at the bonded interfaces remain elusive. Here, we use in situ microparticle impact experiments followed by site-specific micromechanical measurements to study the interfacial strength across bonded interfaces. We reveal a gradient of bond strength starting with a weak bonding near the impact center, followed by a rapid twofold rise to a peak strength significantly higher than the yield strength of the bulk material, and eventually, a plateau covering a large portion of the interface towards the periphery. We show that the form of the native oxide at the bonded interface-whether layers, particles, or debris-dictates the level of bond strength. We formulate a predictive framework for impact-induced bond strength based on the evolution of the contact pressure and surface exposure.
Authors
- Yuji Ichikawa (ORCID: https://orcid.org/0000-0002-9474-3467)
- H. Assadi
- David Veysset (ORCID: https://orcid.org/0000-0003-4473-1983)
- Qi Tang (ORCID: https://orcid.org/0000-0003-4150-4822)
- Mostafa Hassani
Institutions
- Harvard University (US)
- Tohoku University (JP)
- Cornell University (US)
- Massachusetts General Hospital (US)
- Brunel University of London (GB)
- Stanford University (US)
Publication Details
- Journal
- Nature Communications
- Published
- 2024-11-07
- DOI
- https://doi.org/10.1038/s41467-024-53990-z
- Citations
- 20
- Primary Topic
- High-Velocity Impact and Material Behavior
- Type
- article
- Field-Weighted Citation Impact
- 2.34
Funders
- National Science Foundation
- Cornell Center for Materials Research
- Japan Society for the Promotion of Science
- Japan Science and Technology Agency
- Division of Materials Research
- Division of Civil, Mechanical and Manufacturing Innovation
- Precursory Research for Embryonic Science and Technology