Precise p-type and n-type doping of two-dimensional semiconductors for monolithic integrated circuits

The controllable fabrication of patterned p-type and n-type channels with precise doping control presents a significant challenge, impeding the realization of complementary metal-oxide-semiconductor (CMOS) logic using a single van der Waals material. However, such an achievement could offer substantial benefits by enabling continued transistor scaling and unprecedented interlayer interconnect technologies. In this study, we devise a precise method for two-dimensional (2D) semiconductor substitutional doping, which allows for the production of wafer-scale 2H-MoTe<sub>2</sub> thin films with specific p-type or n-type doping. Notably, we extend this approach to the synthesis of spatially selective doped 2H-MoTe<sub>2</sub> thin films via a one-step growth method, facilitating the monolithic integration of p-type and n-type semiconductor channels. Leveraging this advancement, we successfully fabricate a chip-sized 2D CMOS inverter array that demonstrates excellent device performance and yield. Collectively, these findings represent a significant stride towards the practical incorporation of 2D semiconductors in very large-scale integration technology.

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Publication Details

Journal
Nature Communications
Published
2024-11-07
DOI
https://doi.org/10.1038/s41467-024-54050-2
Citations
58
Primary Topic
Graphene research and applications
Type
article
Field-Weighted Citation Impact
6.79

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article

Precise p-type and n-type doping of two-dimensional semiconductors for monolithic integrated circuits

Pingfan Gu, Yu Fei Pan, Zemin Pan, Yuqia Ran et al.
58 citations
Nature Communications
Graphene research and applications
6.79
article

Precise p-type and n-type doping of two-dimensional semiconductors for monolithic integrated circuits

Pingfan Gu, Yu Fei Pan, Zemin Pan, Yuqia Ran, Jun He, Yiwen Song, Bo Han, Tao Jian, Qi Wang, Yanping Li, Yu Ye, Xiaolong Xu, Chendong Zhang, Peng Gao, Wanjin Xu
article en
58 citations

Abstract

The controllable fabrication of patterned p-type and n-type channels with precise doping control presents a significant challenge, impeding the realization of complementary metal-oxide-semiconductor (CMOS) logic using a single van der Waals material. However, such an achievement could offer substantial benefits by enabling continued transistor scaling and unprecedented interlayer interconnect technologies. In this study, we devise a precise method for two-dimensional (2D) semiconductor substitutional doping, which allows for the production of wafer-scale 2H-MoTe<sub>2</sub> thin films with specific p-type or n-type doping. Notably, we extend this approach to the synthesis of spatially selective doped 2H-MoTe<sub>2</sub> thin films via a one-step growth method, facilitating the monolithic integration of p-type and n-type semiconductor channels. Leveraging this advancement, we successfully fabricate a chip-sized 2D CMOS inverter array that demonstrates excellent device performance and yield. Collectively, these findings represent a significant stride towards the practical incorporation of 2D semiconductors in very large-scale integration technology.

Nature CommunicationsVol. 15(1)
Beijing Institute of Technology (CN), Wuhan University of Technology (CN), Nantong University (CN), Peking University (CN), Wuhan University (CN), Collaborative Innovation Center of Quantum Matter (CN), Collaborative Innovation Center of Advanced Microstructures (CN), Shenyang Academy of Environmental Sciences (China) (CN)
National Natural Science Foundation of China, China Postdoctoral Science Foundation
Openalex Percentile: Top 1%
Graphene research and applications
6.79
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