Questioning the validity of spintronic inductors: Potential artifacts in emergent inductance

Understanding and utilizing spin–charge interactions in solids is a cornerstone of spintronics. Emergent inductance, a notable consequence of these interactions, has been observed in various spintronic devices. Typically, it is characterized by a negative inductance at low frequencies and significant suppression at high frequencies due to external pinning effects. However, we demonstrate that these conditions are not exclusive to emergent inductance as parasitic circuit elements can mimic these effects. We find that hidden parasitic capacitance significantly influences the imaginary impedance by forming a parallel resister (R)-capacitor (C) circuit. Additionally, magnetoresistance in the RC circuit alters imaginary impedance magnetically, which also mimics the anisotropic behavior of emergent inductance. These observations suggest that parasitic elements may hinder the observation of pure emergent inductance. Therefore, stricter criteria are required to confirm emergent inductance.

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Publication Details

Journal
Applied Physics Letters
Published
2024-11-04
DOI
https://doi.org/10.1063/5.0227569
Citations
3
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
0.63

Funders

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article

Questioning the validity of spintronic inductors: Potential artifacts in emergent inductance

Byong‐Guk Park, G. H. Lee, Jiseok Yang, Jaimin Kang et al.
3 citations
Applied Physics Letters
Advanced Memory and Neural Computing
0.63
article

Questioning the validity of spintronic inductors: Potential artifacts in emergent inductance

Byong‐Guk Park, G. H. Lee, Jiseok Yang, Jaimin Kang, Albert Min Gyu Park, JG Choi, Kab‐Jin Kim
article en
3 citations

Abstract

Understanding and utilizing spin–charge interactions in solids is a cornerstone of spintronics. Emergent inductance, a notable consequence of these interactions, has been observed in various spintronic devices. Typically, it is characterized by a negative inductance at low frequencies and significant suppression at high frequencies due to external pinning effects. However, we demonstrate that these conditions are not exclusive to emergent inductance as parasitic circuit elements can mimic these effects. We find that hidden parasitic capacitance significantly influences the imaginary impedance by forming a parallel resister (R)-capacitor (C) circuit. Additionally, magnetoresistance in the RC circuit alters imaginary impedance magnetically, which also mimics the anisotropic behavior of emergent inductance. These observations suggest that parasitic elements may hinder the observation of pure emergent inductance. Therefore, stricter criteria are required to confirm emergent inductance.

Applied Physics LettersVol. 125(19)
Korea Advanced Institute of Science and Technology (KR), Quantum Technologies (Sweden) (SE)
Ministry of Trade, Industry and Energy, National Research Foundation of Korea, Korea Semiconductor Research Consortium
Openalex Percentile: Top 31%
Advanced Memory and Neural Computing
0.63
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