Inhomogeneity-facilitated application of ferroelectric barium titanate thin films in artificial neuromorphic system
The growing interest in ferroelectric materials has witnessed the thriving prospect of bio-inspired artificial neuromorphic system, where multi-level polarization states play a crucial role. In this work, with typical BaTiO3 ferroelectric thin film as the model system, we explore the physical effects of inhomogeneity on polarization switching dynamics and neuromorphic performance. Inhomogeneous films exhibited pinched polarization–electric field hysteresis loops, leading to a high recognition accuracy of 96.03% for hand-written digits, compared to about 10.31% for homogeneous films. The inhomogeneity in switching dynamics was analyzed by inhomogeneous field mechanism. Diffusive distributions of switching time and local electric fields were observed, aligning with experimental results and the expected inhomogeneity. The prolonged domain wall depinning time and lowered energy consumption suggest the potential for multi-level polarization states, a possibility further confirmed by phase-field simulations that demonstrated their presence during long-term potentiation/depression. Our work highlights the positive influence of inhomogeneity in enhancing the performance of ferroelectric-based neuromorphic systems.
Authors
- Hong‐Hui Wu (ORCID: https://orcid.org/0000-0002-1381-2281)
- Xiaoqiang Lu (ORCID: https://orcid.org/0000-0002-7037-5188)
- Lin Guo (ORCID: https://orcid.org/0000-0002-3087-1531)
- Fangping Zhuo (ORCID: https://orcid.org/0000-0001-5194-320X)
- Junjie Hu (ORCID: https://orcid.org/0000-0002-1909-7573)
- Titao Li (ORCID: https://orcid.org/0000-0002-5248-4233)
- Chenxi Wang (ORCID: https://orcid.org/0000-0002-3590-7433)
- Minmin Zhu (ORCID: https://orcid.org/0000-0001-8701-3477)
Institutions
- Helmholtz-Zentrum Dresden-Rossendorf (DE)
- Technische Universität Darmstadt (DE)
- Beijing Advanced Sciences and Innovation Center (CN)
- Imperial College London (GB)
- Fuzhou University (CN)
- Sungkyunkwan University (KR)
- University of Science and Technology Beijing (CN)
Publication Details
- Journal
- Applied Physics Letters
- Published
- 2024-11-04
- DOI
- https://doi.org/10.1063/5.0238783
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Deutsche Forschungsgemeinschaft
- National Research Foundation of Korea