Inhomogeneity-facilitated application of ferroelectric barium titanate thin films in artificial neuromorphic system

The growing interest in ferroelectric materials has witnessed the thriving prospect of bio-inspired artificial neuromorphic system, where multi-level polarization states play a crucial role. In this work, with typical BaTiO3 ferroelectric thin film as the model system, we explore the physical effects of inhomogeneity on polarization switching dynamics and neuromorphic performance. Inhomogeneous films exhibited pinched polarization–electric field hysteresis loops, leading to a high recognition accuracy of 96.03% for hand-written digits, compared to about 10.31% for homogeneous films. The inhomogeneity in switching dynamics was analyzed by inhomogeneous field mechanism. Diffusive distributions of switching time and local electric fields were observed, aligning with experimental results and the expected inhomogeneity. The prolonged domain wall depinning time and lowered energy consumption suggest the potential for multi-level polarization states, a possibility further confirmed by phase-field simulations that demonstrated their presence during long-term potentiation/depression. Our work highlights the positive influence of inhomogeneity in enhancing the performance of ferroelectric-based neuromorphic systems.

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Publication Details

Journal
Applied Physics Letters
Published
2024-11-04
DOI
https://doi.org/10.1063/5.0238783
Primary Topic
Ferroelectric and Negative Capacitance Devices
Type
article
Field-Weighted Citation Impact
0.00

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article

Inhomogeneity-facilitated application of ferroelectric barium titanate thin films in artificial neuromorphic system

Hong‐Hui Wu, Xiaoqiang Lu, Lin Guo, Fangping Zhuo et al.
Applied Physics Letters
Ferroelectric and Negative Capacitance Devices
article

Inhomogeneity-facilitated application of ferroelectric barium titanate thin films in artificial neuromorphic system

Hong‐Hui Wu, Xiaoqiang Lu, Lin Guo, Fangping Zhuo, Junjie Hu, Titao Li, Chenxi Wang, Minmin Zhu
article en

Abstract

The growing interest in ferroelectric materials has witnessed the thriving prospect of bio-inspired artificial neuromorphic system, where multi-level polarization states play a crucial role. In this work, with typical BaTiO3 ferroelectric thin film as the model system, we explore the physical effects of inhomogeneity on polarization switching dynamics and neuromorphic performance. Inhomogeneous films exhibited pinched polarization–electric field hysteresis loops, leading to a high recognition accuracy of 96.03% for hand-written digits, compared to about 10.31% for homogeneous films. The inhomogeneity in switching dynamics was analyzed by inhomogeneous field mechanism. Diffusive distributions of switching time and local electric fields were observed, aligning with experimental results and the expected inhomogeneity. The prolonged domain wall depinning time and lowered energy consumption suggest the potential for multi-level polarization states, a possibility further confirmed by phase-field simulations that demonstrated their presence during long-term potentiation/depression. Our work highlights the positive influence of inhomogeneity in enhancing the performance of ferroelectric-based neuromorphic systems.

Applied Physics LettersVol. 125(19)
Helmholtz-Zentrum Dresden-Rossendorf (DE), Technische Universität Darmstadt (DE), Beijing Advanced Sciences and Innovation Center (CN), Imperial College London (GB), Fuzhou University (CN), Sungkyunkwan University (KR), University of Science and Technology Beijing (CN)
Deutsche Forschungsgemeinschaft, National Research Foundation of Korea
Affordable and clean energy
Openalex Percentile: Top 82%
Ferroelectric and Negative Capacitance Devices
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