Light Scattering by Black Silicon Layers

This study investigates optical properties (light reflectance, absorptance, transmittance, and scattering) of black silicon (b-Si) layers formed using reactive ion etching. The corresponding spectra were determined in the visible, near-infrared, and near-ultraviolet wavelength ranges (250—1400nm). It is demonstrated that the presence of b-Si layers leads to a decrease in reflectance and an increase in absorptance and light scattering across the entire spectral range of interest. Increasing the etching duration strengthens this trend. However, b-Si layers cannot be considered perfect scatterers due to a monotonic decrease in the diffuse reflectance at wavelengths greater than 600 nm. The potential applications of b-Si layers in solar cells and photodetectors are discussed.