Towards Nanosheet Field Effect Transistors

The present paper discusses the tendency of Field Effect transistors (FETs) towards lower dimensional devices. They are drastically shrinking in size and tending to nano sheets form. This device shrinking is needed to remain in the More-than-Moore’s Law era and go down in technology nodes smaller than 3 nm. The tendency started by FinFETs, then GAAFETs, followed by NanoFETs and now Nanosheet FETs. This evolution supposes the node value to be a true 3D node. The advantage of this technology change is to have a better field control and device ON/OFF performances aiming very low power consumption. Based on our simulation results, it has been found that nano sheet devices are likely to take over for the next decade(s) and reduce the technology nodes based on the verticality of the technology. It has been concluded that three/four nanosheets FETs are likely to be the dominant device in the near future.