XNOR Operation of Binary Neural Networks Using Nanoelectromechanical Memory Switches
A highly efficient nanoelectromechanical memory switch-based binary neural network (NEM BNN) is proposed for the first time. Utilizing the electromechanical movement of a cantilever beam, XNOR operation for BNNs is implemented with two access transistors and an NEM memory switch. Owing to the unique properties of NEM memory switches with monolithic 3-D (M3D) integration and nonvolatility, the proposed NEM BNNs achieve 84% smaller area and 87% lower energy consumption than SRAM-based BNNs. Furthermore, owing to the superior ON/OFF resistance ratio of NEM memory switches, NEM BNNs feature higher energy efficiency, performance, and inference accuracy than other emerging nonvolatile-based BNNs.
Authors
- Woo Young Choi (ORCID: https://orcid.org/0000-0002-5515-2912)
- Jae Seung Woo (ORCID: https://orcid.org/0000-0003-4781-4979)
- Geun Tae Park
- Jin Wook Lee (ORCID: https://orcid.org/0009-0005-2914-1995)
Institutions
- Seoul National University (KR)
Publication Details
- Journal
- IEEE Transactions on Electron Devices
- Published
- 2024-11-07
- DOI
- https://doi.org/10.1109/ted.2024.3486267
- Citations
- 1
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.21
Funders
- Ministry of Science and ICT, South Korea