AlN-based vacuum ultraviolet Schottky barrier photodetector

Vacuum ultraviolet (VUV) photodetectors are essential for applications in space science, semiconductor lithography, and life science. In this study, we present what we believe to be a novel AlN-based VUV Pt-AlN Schottky barrier photodetector fabricated on a sapphire substrate. This device comprises an i-AlN/n-AlGaN layer structure and ingeniously utilizes an n-AlGaN layer and metal to establish an ohmic contact, addressing the challenge of n-type doping in AlN. Experimental results demonstrate a peak response of 0.06A/W at 194 nm under 0 V bias and clear rectification characteristics. The specific detectivity D* is 4.8 × 10 12 cm · Hz 0.5 · W −1 at 0V bias for the device, indicating the device’s excellent detection performance. The realization of this device opens up possibilities for developing chip-level integrated detectors suitable for VUV detection.

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Publication Details

Journal
Optics Express
Published
2024-11-07
DOI
https://doi.org/10.1364/oe.543466
Citations
6
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
1.87

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article

AlN-based vacuum ultraviolet Schottky barrier photodetector

Zongshun Liu, Yuting Fu, Degang Zhao, Ping Chen et al.
6 citations
Optics Express
GaN-based semiconductor devices and materials
1.87
article

AlN-based vacuum ultraviolet Schottky barrier photodetector

Zongshun Liu, Yuting Fu, Degang Zhao, Ping Chen, Xuefeng Liu, Jing Yang, Feng Liang, Zhaolan Sun, Yuheng Zhang, Bin Liu, Fu Zheng
article en
6 citations

Abstract

Vacuum ultraviolet (VUV) photodetectors are essential for applications in space science, semiconductor lithography, and life science. In this study, we present what we believe to be a novel AlN-based VUV Pt-AlN Schottky barrier photodetector fabricated on a sapphire substrate. This device comprises an i-AlN/n-AlGaN layer structure and ingeniously utilizes an n-AlGaN layer and metal to establish an ohmic contact, addressing the challenge of n-type doping in AlN. Experimental results demonstrate a peak response of 0.06A/W at 194 nm under 0 V bias and clear rectification characteristics. The specific detectivity D* is 4.8 × 10 12 cm · Hz 0.5 · W −1 at 0V bias for the device, indicating the device’s excellent detection performance. The realization of this device opens up possibilities for developing chip-level integrated detectors suitable for VUV detection.

Optics ExpressVol. 32(24)
Hunan University of Science and Technology (CN), Chinese Academy of Sciences (CN), National Space Science Center (CN), Institute of Semiconductors (CN), University of Chinese Academy of Sciences (CN)
National Natural Science Foundation of China, Youth Innovation Promotion Association of the Chinese Academy of Sciences, National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 14%
GaN-based semiconductor devices and materials
1.87
DOIOpen Access PDFOpenAlex
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AlN-based vacuum ultraviolet Schottky barrier photodetector — Zongshun Liu, Yuting Fu, et al. · Optics Express (2024) | TGRS Research Map | TGRS