Cr<sup>3+</sup>‐Activated Deep Trap Electron‐Trapping Biphasic Mixture of Zn (Al,Ga)<sub>2</sub>O<sub>4</sub> and Zn<sub>2</sub>GeO<sub>4</sub> for Multilevel Information Storage by Trap Multiplexing and Wavelength Multiplexing

Double wavelength emitting phosphors with hypersensitive thermal response are important for optical/thermal sensors and multiplexing optical data storage technology. However, it is a daunting challenge to develop multicolor electron-trapping materials with superheat sensitivity and anomalous quenching luminescence characteristics for information storage. Here, based on the selection of host lattice and the control of doping ion types, we have designed Mn<sup>2+</sup>- and/or Cr<sup>3+</sup>-activated persistent materials with excellent fluorescence properties. Among these phosphors, Mn,Cr co-activated biphasic mixture exhibits not only sensitive anomalous thermosensitive fluorescence properties but also multicolor and multimode fluorescence emission characteristics derived from Mn and Cr simultaneously. The corresponding multimode fluorescence mechanism is proposed based on afterglow energy transfer and deepening trap effect. Especially, based on the excellent fluorescence performances, these phosphors as information storage medium demonstrate multilevel information storage by a combination of the trap multiplexing and wavelength multiplexing technologies. The study here provides not only the ideas for designing and synthesizing new electronic materials but also a material foundation for the fourth generation of optical information storage and encryption.

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Publication Details

Journal
Luminescence
Published
2024-11-01
DOI
https://doi.org/10.1002/bio.70027
Citations
7
Primary Topic
Luminescence Properties of Advanced Materials
Type
article
Field-Weighted Citation Impact
0.82

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article

Cr3+‐Activated Deep Trap Electron‐Trapping Biphasic Mixture of Zn (Al,Ga)2O4 and Zn2GeO4 for Multilevel Information Storage by Trap Multiplexing and Wavelength Multiplexing

Xiaojun Wang, Zhigang Wang, Dangli Gao, Sining Yun et al.
7 citations
Luminescence
Luminescence Properties of Advanced Materials
0.82
article

Cr3+‐Activated Deep Trap Electron‐Trapping Biphasic Mixture of Zn (Al,Ga)2O4 and Zn2GeO4 for Multilevel Information Storage by Trap Multiplexing and Wavelength Multiplexing

Xiaojun Wang, Zhigang Wang, Dangli Gao, Sining Yun, Wei Xu, Xiangyu Zhang, Jiayu Wang, Wenna Gao
article en
7 citations

Abstract

Double wavelength emitting phosphors with hypersensitive thermal response are important for optical/thermal sensors and multiplexing optical data storage technology. However, it is a daunting challenge to develop multicolor electron-trapping materials with superheat sensitivity and anomalous quenching luminescence characteristics for information storage. Here, based on the selection of host lattice and the control of doping ion types, we have designed Mn<sup>2+</sup>- and/or Cr<sup>3+</sup>-activated persistent materials with excellent fluorescence properties. Among these phosphors, Mn,Cr co-activated biphasic mixture exhibits not only sensitive anomalous thermosensitive fluorescence properties but also multicolor and multimode fluorescence emission characteristics derived from Mn and Cr simultaneously. The corresponding multimode fluorescence mechanism is proposed based on afterglow energy transfer and deepening trap effect. Especially, based on the excellent fluorescence performances, these phosphors as information storage medium demonstrate multilevel information storage by a combination of the trap multiplexing and wavelength multiplexing technologies. The study here provides not only the ideas for designing and synthesizing new electronic materials but also a material foundation for the fourth generation of optical information storage and encryption.

LuminescenceVol. 39(11)
Xi'an University of Architecture and Technology (CN), Chang'an University (CN), Georgia Southern University (US)
National Natural Science Foundation of China
Affordable and clean energy
Openalex Percentile: Top 25%
Luminescence Properties of Advanced Materials
0.82
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