Perovskite Thin‐Film Transistors for Ultra‐Low‐Voltage Neuromorphic Visions

Perovskite thin-film transistors (TFTs) simultaneously possessing exceptional carrier transport capabilities, nonvolatile memory effects, and photosensitivity have recently attracted attention in fields of both complementary circuits and neuromorphic computing. Despite continuous performance improvements through additive and composition engineering of the channel materials, the equally crucial dielectric/channel interfaces of perovskite TFTs have remained underexplored. Here, it is demonstrated that engineering the dielectric/channel interface in 2D tin perovskite TFTs not only enhances the performance and operational stability for their utilization in complementary circuits but also enables efficient synaptic behaviors (optical information sensing and storage) under an extremely low operating voltage of -1 mV at the same time. The interface-engineered TFT arrays operating at -1 mV are then demonstrated as the preprocessing hardware for neuromorphic visions with pattern recognition accuracy of 92.2% and long-term memory capability. Such a low operating voltage provides operational feasibility to the design of large-scale-integrated and wearable/implantable neuromorphic hardware.

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Publication Details

Journal
Advanced Science
Published
2024-11-06
DOI
https://doi.org/10.1002/advs.202410015
Citations
10
Primary Topic
Perovskite Materials and Applications
Type
article
Field-Weighted Citation Impact
2.09

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article

Perovskite Thin‐Film Transistors for Ultra‐Low‐Voltage Neuromorphic Visions

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10 citations
Advanced Science
Perovskite Materials and Applications
2.09
article

Perovskite Thin‐Film Transistors for Ultra‐Low‐Voltage Neuromorphic Visions

Yimu Chen, Sai Bai, Qinghai Song, Ao Liu, Jing‐Kai Qin, Ruiqin He, De Yu, Yuxin Gao, Tongpeng Zhao, Rong Yang, Can Huang, Xin Zhang, Yuheng Li, Huihui Zhu, Shumin Xiao, Jie Wang, Tao Wang
article en
10 citations

Abstract

Perovskite thin-film transistors (TFTs) simultaneously possessing exceptional carrier transport capabilities, nonvolatile memory effects, and photosensitivity have recently attracted attention in fields of both complementary circuits and neuromorphic computing. Despite continuous performance improvements through additive and composition engineering of the channel materials, the equally crucial dielectric/channel interfaces of perovskite TFTs have remained underexplored. Here, it is demonstrated that engineering the dielectric/channel interface in 2D tin perovskite TFTs not only enhances the performance and operational stability for their utilization in complementary circuits but also enables efficient synaptic behaviors (optical information sensing and storage) under an extremely low operating voltage of -1 mV at the same time. The interface-engineered TFT arrays operating at -1 mV are then demonstrated as the preprocessing hardware for neuromorphic visions with pattern recognition accuracy of 92.2% and long-term memory capability. Such a low operating voltage provides operational feasibility to the design of large-scale-integrated and wearable/implantable neuromorphic hardware.

Advanced ScienceVol. 11(48)
University of Electronic Science and Technology of China (CN), Shenzhen Institute of Information Technology (CN), Hong Kong University of Science and Technology (HK), Harbin Institute of Technology (CN), Ministry of Industry and Information Technology (CN)
National Natural Science Foundation of China, National Key Research and Development Program of China, Special Project for Research and Development in Key areas of Guangdong Province, Basic and Applied Basic Research Foundation of Guangdong Province
Affordable and clean energy
Openalex Percentile: Top 12%
Perovskite Materials and Applications
2.09
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