Ensemble Monte Carlo transport studies of zinc-blende cuprous halides

We present a comprehensive theoretical analysis of intrinsic high-field transport in cuprous halides: CuCl, CuBr, and CuI. Ensemble Monte Carlo transport simulations were performed based on analytical approximations of the multi-valley and three-band electronic structure model. The deformation potentials, extracted from carrier–phonon interaction matrix elements calculated via the Wannier function approach, were employed to determine scattering rates. Our detailed analysis uncovers intriguing transport characteristics based on the complex valence band structures, resulting from spin–orbit coupling and band inversion. Remarkably, the hole mobility in CuI was exceptionally high, reaching up to 193 cm2/V s, while CuCl exhibited unusual temperature dependencies in hole transport. Additionally, the electron mobility in CuI was found to be 254 cm2/V s, indicating a minimal disparity between carrier mobilities, which is advantageous for optoelectronic applications.