Numerical modelling of lead-free perovskite photodetector with GO as ETM and Cz-N as HTM

Photodetectors are optoelectronic devices that can convert optical signals into electrical signals by way of the photoelectric effect. A model of CsSn 0.5 Ge 0.5 I 3 -based nip perovskite photodetector (PePd) with graphene oxide as electron transport material and carbazole unit with naphthalene is used as hole transport material is established. The device configuration was analysed using Solar Cell Capacitance Simulator-1 dimensional. The effects of absorber thickness, defect density of CsSn 0.5 Ge 0.5 I 3 , metal work function and operating temperature on device architecture have been investigated. For the incident light between 800 and 820 nm, a maximum responsivity and detectivity of 0.65 A/W and 3.6 × 10 13 Jones are obtained, respectively. The proposed photodetector demonstrates broad-spectrum detection, covering both the visible and near-infrared (NIR) regions. These findings highlight CsGe 0.5 Sn 0.5 I 3 and Cz-N as promising alternatives to conventional photodetector materials like InGaAs, Si-Ge, GaN and ZnO. These simulation results will assist in future research on high-performance lead-free PePd.