Modeling and Analysis of On-Chip Voltage Fluctuations Caused by Electromagnetic Fault Injection

Near-field electromagnetic fault injection (EMFI) is one of the most commonly used attack methods to intentionally cause errors in digital circuits due to its inherent advantages. A full-wave simulator was used to analyze the voltage fluctuations on the on-chip power mesh excited by EMFI. We have described the relationship in which the shape of the voltage fluctuations on the power mesh inside ICs is derived from the differentiation of the current flowing through the injection coil by using Maxwell’s equations and full-wave simulations. In addition, the results with different injection positions and ideal voltage source points have showed that the areas of high sensitivity vary on the power supply mesh.