A Homogeneous FeFET-Based Time-Domain Compute-in-Memory Fabric for Matrix-Vector Multiplication and Associative Search
Matrix-vector multiplication (MVM) and content-based search are two key operations in many machine learning workloads. This article proposes a ferroelectric FET (FeFET) time-domain compute-in-memory (TD-CiM) array that can accelerate both operations in a homogeneous fabric. We demonstrate that 1) the AND and xor/XNOR logic functions required by MVM and content-based search can be realized using a single compute-in-memory (CiM) cell composed of 2FeFETs connected in series; 2) an inverter chain-based TD-CiM array along with a two-phase time-domain computation principle of the TD-CiM can be employed to implement the MVM and content-based search functions; 3) a signal delay-to-digital output conversion can be implemented by associating a loading capacitor with each stage of the inverter chain-based TD-CiM array, ensuring the full digital compatibility; and 4) the proposed 2FeFET cell and inverter chain-based TD-CiM array are robust against FeFET variation according to our comprehensive theoretical and experimental validation. We show how the FeFET TD-CiM can be exploited to accelerate hyperdimensional computing (HDC) and adjusted to process different tasks through dynamic and fine-grained resource allocation. HDC application benchmarking results show that the proposed FeFET-based TD-CiM offers on average <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$106\times $ </tex-math></inline-formula>/<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$63\times $ </tex-math></inline-formula> energy reduction/speedup compared to GPU-based implementation. With more than 8500 TOPS/W energy-efficiency, the proposed FeFET-based TD-CiM exhibits huge potential as a processing fabric for various memory-intensive applications.
Authors
- Franz Müller
- Zhouhang Jiang (ORCID: https://orcid.org/0000-0001-6039-920X)
- Ulf Schlichtmann (ORCID: https://orcid.org/0000-0003-4431-7619)
- Hamza Errahmouni Barkam (ORCID: https://orcid.org/0000-0002-0500-4647)
- Shan Deng (ORCID: https://orcid.org/0000-0003-1137-8626)
- Mohsen Imani (ORCID: https://orcid.org/0000-0002-5761-0622)
- Qingrong Huang (ORCID: https://orcid.org/0000-0002-3196-4203)
- Cheng Zhuo (ORCID: https://orcid.org/0000-0002-2610-7522)
- Sourav De (ORCID: https://orcid.org/0000-0002-1930-8799)
- Alptekin Vardar (ORCID: https://orcid.org/0009-0004-0629-0325)
- Xunzhao Yin (ORCID: https://orcid.org/0000-0003-4656-9545)
- Kai Ni (ORCID: https://orcid.org/0000-0002-3628-3431)
- Thomas Kämpfe (ORCID: https://orcid.org/0000-0002-4672-8676)
- Xiaobo Sharon Hu (ORCID: https://orcid.org/0000-0002-6636-9738)
Institutions
- University of Notre Dame (US)
- Rochester Institute of Technology (US)
- University of California, Irvine (US)
- National Tsing Hua University (TW)
- Fraunhofer Institute for Photonic Microsystems (DE)
- Technical University of Munich (DE)
- Zhejiang University (CN)
Publication Details
- Journal
- IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
- Published
- 2024-11-06
- DOI
- https://doi.org/10.1109/tcad.2024.3492994
- Citations
- 15
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 3.13