STT-MRAM Based ESD and EFT Immunity Analysis
This study analyses the Electromagnetic Immunity (EMI) of STT-MRAM. By exhaustively exploring and verifying the Electrostatic discharge (ESD) and Electrical Fast Transient (EFT) of STT-MRAM, the impact of ESD and EFT on the performance of STT-MRAM is investigated, the potential threat of transient electromagnetic interference to STT-MRAM memory is revealed, and suggestions are made to improve its electromagnetic compatibility (EMC), which provides an important reference for its reliable application.
Authors
- Wei Zhu (ORCID: https://orcid.org/0000-0001-8500-3961)
- Yanfang Lu (ORCID: https://orcid.org/0000-0002-7710-6853)
- Yiming Zhang (ORCID: https://orcid.org/0000-0002-3693-8039)
- Hongli Zhang (ORCID: https://orcid.org/0000-0002-8167-7106)
- Yang Li (ORCID: https://orcid.org/0000-0002-0327-4221)
- Xing Zhao
- Jianfei Wu (ORCID: https://orcid.org/0009-0006-4191-3000)
Institutions
- National University of Defense Technology (CN)
- Hebei University of Technology (CN)
- Chinese Academy of Sciences (CN)
- Institute of Microelectronics (CN)
- Tianjin Institute of Advanced Technology (CN)
Publication Details
- Published
- 2024-10-07
- DOI
- https://doi.org/10.1109/emccompo61192.2024.10742064
- Primary Topic
- Integrated Circuits and Semiconductor Failure Analysis
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Research and Development