High‐speed and contactless inspection of defective micro‐LEDs through the photovoltaic effect

Abstract The most significant challenge associated with micro‐light‐emitting‐diode (micro‐LED) displays, which are anticipated to be the next generation of display technology, is the high manufacturing cost. In order to reduce manufacturing costs, it is essential to improve yield. Improving the manufacturing yield of them necessitates the evaluation of micro‐LED chips prior to their installation onto substrates. However, the microsize and large quantity of these chips renders inspection difficult with conventional inspection methods. Herein, we propose a method for inspecting micro‐LED chips by measuring the voltage generated between the anode and cathode due to the photovoltaic effect using a developed proximity capacitance image sensor. As this inspection method does not require the use of probe pins to contact LED electrodes, it enables simultaneous inspection of multiple chips in a short time without causing any damage to the electrodes. In this paper, an experimental system equipped with this sensor was developed to demonstrate the basic measurement principle. Moreover, we demonstrated that more than 50,000 micro‐LED chips with a size of 60 μm × 34 μm can be simultaneously inspected in approximately 2 s.