Short range optical communication with GaN‐on‐Si microLED and microPD matrices
Abstract (In)GaN microLEDs have reached a high degree of maturity due to their development in the lighting industry. Their robustness and high efficiency make them ideal candidates for high‐brightness, high‐resolution micro‐displays. Beyond display applications, microLEDs are being explored for non‐display uses, including wireless Visible Light Communication (VLC) and parallel communication via multicore fiber. This study investigates short‐range chip‐to‐chip optical communication using InGaN/GaN microLEDs and micro Photodiodes (microPDs). Leveraging processes developed for micro‐displays, we address the challenges of integrating GaN microLEDs and microPDs on ASICs. We outline the main figures of merit, including expected energy efficiency, optical coupling to multicore fibers or waveguides, and the spectral efficiency of InGaN/GaN microPDs correlated with TCAD simulation and experimental transmission results. Our study highlights the potential of GaN microLEDs and microPDs for massively parallel, energy‐efficient data transmission, paving the way for innovative short‐range and energy‐efficient optical communication solutions.
Authors
- Sultan El Badaoui (ORCID: https://orcid.org/0009-0006-5466-2474)
- Julia Simon (ORCID: https://orcid.org/0000-0003-0243-9706)
- Bernard Aventurier
- Anthony Cibié
- Nicolas Michit (ORCID: https://orcid.org/0000-0002-6233-292X)
- Clément Ballot
- Patrick Le Maître (ORCID: https://orcid.org/0009-0007-3191-2546)
- S. Jacob
- Paolo De Martino
- Fabian Rol (ORCID: https://orcid.org/0009-0008-0381-4153)
- Bastien Miralles
Institutions
- Institut polytechnique de Grenoble (FR)
- Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR)
- CEA Grenoble (FR)
- Laboratoire d'Électronique des Technologies de l'Information (FR)
- Université Grenoble Alpes (FR)
Publication Details
- Journal
- Journal of the Society for Information Display
- Published
- 2024-11-05
- DOI
- https://doi.org/10.1002/jsid.2012
- Citations
- 8
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 2.49