2D‐Penta‐PdPS: Gate‐Tunable and Thickness‐Dependent Thermoelectric Transport

Pentagonal two-dimensional (2D) materials are notable for unique properties derived from their Cairo pentagonal tiling topology. This study explores the thermoelectric potential of exfoliated penta-palladium-phosphorus-sulfur (PdPS) atomic layers, an air-stable 2D semiconductor with a puckered pentagonal low-symmetry structure, grown via chemical vapor transport (CVT). Thickness-dependent in-plane electrical conductivity (σ) and thermoelectric power factor (PF) of PdPS are investigated from 20-380 K, showing an increase in σ with thickness (11, 13, and 88-layer). Applying back-gate voltage (V<sub>g</sub>) modulates the Fermi energy (E<sub>F</sub>), and as V<sub>g</sub> decreases, the Seebeck coefficient (S) rises, achieving S of -700 µV K<sup>-1</sup> for 11-layer PdPS at -10 V, significantly higher than the -400 µV K<sup>-1</sup> for 88-layer PdPS. The PF increased with decreasing thickness, peaking at ≈50 µW m<sup>-1</sup> K<sup>-2</sup> for 11-layer PdPS, about twice than that of 88-layer PdPS. The high electron mobility (µ<sub>e</sub>) in PdPS is confined to a narrow temperature range, peaking at 300 cm<sup>2</sup> Vs<sup>-1</sup> at 100 K, marking the transition temperature from ionized impurity scattering to acoustic phonon scattering mechanism, consistent across all layer counts. This work highlights the significant impact of quantum confinement in ultrathin bodies in enhancing thermoelectric performance across a wide temperature range.

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Publication Details

Journal
Small
Published
2024-11-05
DOI
https://doi.org/10.1002/smll.202405645
Citations
3
Primary Topic
Advanced Thermoelectric Materials and Devices
Type
article
Field-Weighted Citation Impact
0.35

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article

2D‐Penta‐PdPS: Gate‐Tunable and Thickness‐Dependent Thermoelectric Transport

Ruihuan Duan, Mohamed Boutchich, Beng Kang Tay, Qundong Fu et al.
3 citations
Small
Advanced Thermoelectric Materials and Devices
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article

2D‐Penta‐PdPS: Gate‐Tunable and Thickness‐Dependent Thermoelectric Transport

Ruihuan Duan, Mohamed Boutchich, Beng Kang Tay, Qundong Fu, Zheng Liu, Weng Hou Yip, Xingli Wang
article en
3 citations

Abstract

Pentagonal two-dimensional (2D) materials are notable for unique properties derived from their Cairo pentagonal tiling topology. This study explores the thermoelectric potential of exfoliated penta-palladium-phosphorus-sulfur (PdPS) atomic layers, an air-stable 2D semiconductor with a puckered pentagonal low-symmetry structure, grown via chemical vapor transport (CVT). Thickness-dependent in-plane electrical conductivity (σ) and thermoelectric power factor (PF) of PdPS are investigated from 20-380 K, showing an increase in σ with thickness (11, 13, and 88-layer). Applying back-gate voltage (V<sub>g</sub>) modulates the Fermi energy (E<sub>F</sub>), and as V<sub>g</sub> decreases, the Seebeck coefficient (S) rises, achieving S of -700 µV K<sup>-1</sup> for 11-layer PdPS at -10 V, significantly higher than the -400 µV K<sup>-1</sup> for 88-layer PdPS. The PF increased with decreasing thickness, peaking at ≈50 µW m<sup>-1</sup> K<sup>-2</sup> for 11-layer PdPS, about twice than that of 88-layer PdPS. The high electron mobility (µ<sub>e</sub>) in PdPS is confined to a narrow temperature range, peaking at 300 cm<sup>2</sup> Vs<sup>-1</sup> at 100 K, marking the transition temperature from ionized impurity scattering to acoustic phonon scattering mechanism, consistent across all layer counts. This work highlights the significant impact of quantum confinement in ultrathin bodies in enhancing thermoelectric performance across a wide temperature range.

SmallVol. 21(1)
Centre National de la Recherche Scientifique (FR), Nanyang Technological University (SG), Université Paris-Saclay (FR), Laboratoire de Génie Électrique et Électronique de Paris (FR), Sorbonne Université (FR), CentraleSupélec (FR)
Nanyang Technological University, Ministère de l'Europe et des Affaires Étrangères, Ministry of Education, India
Affordable and clean energy
Openalex Percentile: Top 43%
Advanced Thermoelectric Materials and Devices
0.35
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