Strain engineering for the interfacial thermal resistance of few-layer graphene with porous defects

As electronic devices continue to advance toward higher integration, thermal management issues have become a bottleneck, limiting device performance at the nanoscale. In this study, we reveal the bistable structural characteristics of circular hole defects in few-layer graphene, exhibiting both adhered and separated states, through molecular dynamics simulations. We propose a mechanical model that considers the interplay between the bending energy and cohesive energy to determine the critical size of the hole defect, at which the structure transits between the adhered and separated states. We further demonstrate that strain engineering can adjust the interfacial thermal resistance by more than fivefolds, which drives the structure transit between bistable states. The strain effect on the interfacial thermal resistance of the structure can be accurately described using analytical models. These findings illustrate that strain engineering is an effective method for precisely controlling the interfacial thermal resistance in few-layer graphene and provide new insights into possible thermal switch applications.