EFFECT OF TEMPERATURE ON THE STRAIN SENSITIVITY OF MANGANESE-COMPENSATED SILICON

In this paper, the strain gauge response of manganese-doped silicon is studied as a function of manganese concentration, ranging from 1×10¹² cm⁻³ to 1×10¹⁵ cm⁻³, at different temperatures. Mathematical modeling is performed, including calculations and plotting of graphs illustrating how the strain gauge response depends on manganese concentration and temperature.

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Publication Details

Journal
American Journal Of Applied Science And Technology
Published
2024-11-01
DOI
https://doi.org/10.37547/ajast/volume04issue11-03
Primary Topic
Advanced MEMS and NEMS Technologies
Type
article
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article

EFFECT OF TEMPERATURE ON THE STRAIN SENSITIVITY OF MANGANESE-COMPENSATED SILICON

I. G. Tursunov, M. A. Rakhmanov
American Journal Of Applied Science And Technology
Advanced MEMS and NEMS Technologies
article

EFFECT OF TEMPERATURE ON THE STRAIN SENSITIVITY OF MANGANESE-COMPENSATED SILICON

I. G. Tursunov, M. A. Rakhmanov
article en

Abstract

In this paper, the strain gauge response of manganese-doped silicon is studied as a function of manganese concentration, ranging from 1×10¹² cm⁻³ to 1×10¹⁵ cm⁻³, at different temperatures. Mathematical modeling is performed, including calculations and plotting of graphs illustrating how the strain gauge response depends on manganese concentration and temperature.

American Journal Of Applied Science And TechnologyVol. 4(11)
National Pedagogical University of Uzbekistan named after Nizami (UZ)
Openalex Percentile: Top 83%
Advanced MEMS and NEMS Technologies
DOIOpen Access PDFOpenAlex
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EFFECT OF TEMPERATURE ON THE STRAIN SENSITIVITY OF MANGANESE-COMPENSATED SILICON — I. G. Tursunov, M. A. Rakhmanov · American Journal Of Applied Science And Technology (2024) | TGRS Research Map | TGRS