AlGaN-Based Ultraviolet PIN Photodetector Grown on Silicon Substrates Using SiN Nitridation Process and Step-Graded Buffers
The integration of aluminum gallium nitride (AlGaN) with silicon substrates attracts significant attention due to the superior UV sensitivity of AlGaN and the cost-effectiveness as well as mechanical robustness of silicon. A PIN ultraviolet photodetector with a peak detection wavelength of 274 nm is presented in this paper. By employing a SiN nucleation layer and a step-graded buffer, a high-quality AlGaN-based photodetector structure with a dislocation density of 2.4 × 109/cm2 is achieved. A double-temperature annealing technique is utilized to optimize the Ohmic contact of the n-type AlGaN. The fabricated UV photodetector attains a dark current of 0.12 nA at −1 V and a peak responsivity of 0.12 A/W.
Authors
- Xin Wei (ORCID: https://orcid.org/0000-0001-7537-7679)
- Yan Maidebura (ORCID: https://orcid.org/0000-0001-6380-950X)
- Yanmei Su (ORCID: https://orcid.org/0000-0002-6544-9816)
- К. С. Журавлев (ORCID: https://orcid.org/0000-0002-3171-5098)
- Jian Li (ORCID: https://orcid.org/0000-0001-5104-1564)
- Gang Wu (ORCID: https://orcid.org/0000-0003-3043-3336)
- Yang Zhang (ORCID: https://orcid.org/0000-0001-7490-8343)
Institutions
- Chinese Academy of Sciences (CN)
- Institute of Semiconductor Physics (RU)
- Institute of Semiconductors (CN)
- University of Chinese Academy of Sciences (CN)
Publication Details
- Journal
- Crystals
- Published
- 2024-10-31
- DOI
- https://doi.org/10.3390/cryst14110952
- Citations
- 3
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.93
Funders
- Beijing University of Posts and Telecommunications
- Siberian Branch, Russian Academy of Sciences
- Ministry of Science and Higher Education of the Russian Federation