Full-Scale Field-Free Magnetization Switching in Y<sub>3</sub>Fe<sub>5</sub>O<sub>12</sub>/Pt Nanostructures for Spin–Orbit Torque Applications

The ability to achieve perpendicular magnetization switching via spin–orbit torques (SOTs) is a critical advance for the development of the next generation of spintronic applications. However, the use of an external magnetic field to break the mirror symmetry is typically required to facilitate current-induced magnetization switching, which poses a significant challenge for practical implementation. Here, we demonstrate the field-free magnetization switching in the Y3Fe5O12 (YIG)/Pt heterostructure. This is achieved by introducing a lateral structure asymmetry in our devices, which can lead to an out-of-plane effective field. Our results provide an alternative solution for achieving field-free magnetization switching in nanoscale ferrimagnet-based heterostructures, thereby advancing the development of emerging SOT-based devices.

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Publication Details

Journal
ACS Applied Nano Materials
Published
2024-11-05
DOI
https://doi.org/10.1021/acsanm.4c04046
Citations
4
Primary Topic
Magnetic properties of thin films
Type
article
Field-Weighted Citation Impact
1.35

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article

Full-Scale Field-Free Magnetization Switching in Y3Fe5O12/Pt Nanostructures for Spin–Orbit Torque Applications

Sheng Cheng, Jianwang Cai, Xiaozhi Zhan, Qixun Guo et al.
4 citations
ACS Applied Nano Materials
Magnetic properties of thin films
1.35
article

Full-Scale Field-Free Magnetization Switching in Y3Fe5O12/Pt Nanostructures for Spin–Orbit Torque Applications

Sheng Cheng, Jianwang Cai, Xiaozhi Zhan, Qixun Guo, Tao Zhu, Dan Liu, Pengfei Liu, Jialiang Li, Yuan Sun, Songwen Xiao, Xiao Deng, He Bai
article en
4 citations

Abstract

The ability to achieve perpendicular magnetization switching via spin–orbit torques (SOTs) is a critical advance for the development of the next generation of spintronic applications. However, the use of an external magnetic field to break the mirror symmetry is typically required to facilitate current-induced magnetization switching, which poses a significant challenge for practical implementation. Here, we demonstrate the field-free magnetization switching in the Y3Fe5O12 (YIG)/Pt heterostructure. This is achieved by introducing a lateral structure asymmetry in our devices, which can lead to an out-of-plane effective field. Our results provide an alternative solution for achieving field-free magnetization switching in nanoscale ferrimagnet-based heterostructures, thereby advancing the development of emerging SOT-based devices.

ACS Applied Nano MaterialsVol. 8(1)
Beijing Technology and Business University (CN), Chinese Academy of Sciences (CN), Ji Hua Laboratory (CN), China Spallation Neutron Source (CN), Songshan Lake Materials Laboratory (CN), FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic (CZ), Institute of High Energy Physics (CN), Institute of Physics (CN), Spallation Neutron Source
National Natural Science Foundation of China, National Key Research and Development Program of China, Basic and Applied Basic Research Foundation of Guangdong Province
Affordable and clean energy
Openalex Percentile: Top 19%
Magnetic properties of thin films
1.35
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