Red light-emitting diode with full InGaN structure on a ScAlMgO<sub>4</sub> substrate
Abstract Here, we report the first demonstration of a full InGaN-based red LED grown on a c -plane ScAlMgO 4 substrate. This work represents a potential approach for achieving red emissions from an InGaN quantum well grown on InGaN underlying layers. The LED device exhibits a peak wavelength of 617 nm at a current injection of 40 mA (10.5 A cm −2 ). The light output power and external quantum efficiency were 12.6 μ W and 0.016% at 40 mA (10.5 A cm −2 ), respectively. These results are expected to contribute to the development of longer-wavelength emission LEDs and laser diodes.
Authors
- Mohammed A. Najmi (ORCID: https://orcid.org/0000-0002-3214-6683)
- Daisuke Iida
- Kazuhiro Ohkawa (ORCID: https://orcid.org/0000-0002-8728-3503)
- I. Kotov (ORCID: https://orcid.org/0000-0003-2891-9310)
- Wakana Takeuchi (ORCID: https://orcid.org/0009-0008-4053-3692)
- Rawan Jalmood (ORCID: https://orcid.org/0000-0001-9604-3985)
- Cesur Altinkaya (ORCID: https://orcid.org/0000-0002-4451-4340)
Institutions
- Aichi Institute of Technology (JP)
- King Abdullah University of Science and Technology (SA)
Publication Details
- Journal
- Applied Physics Express
- Published
- 2024-11-01
- DOI
- https://doi.org/10.35848/1882-0786/ad8f0e
- Citations
- 2
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.62
Funders
- King Abdullah University of Science and Technology