Experimental investigation on in-situ laser-assisted mechanical ruling of single crystal silicon

Abstract In this paper, response surface methodology (RSM) was employed as a robust and convenient predictive tool to establish the correlation between process parameters of in situ laser-assisted mechanical ruling and the ductile-to-brittle transition of single-crystal silicon. The interaction effects among three factors laser power, ruling speed, and negative rake angle on the ductile-to-brittle transition of single-crystal silicon were investigated. The optimal combination of process parameters was determined to be a laser power of 30W, a ruling speed of 0.25 mm s −1 , and a negative rake angle of 58°. Utilizing a self-assembled setup and the optimal process parameters, multiple processing experiments were conducted. The average error between the experimental and predicted values was found to be 2.8%.