(In,Ga)N-GaN resonant Bragg structures with single and double quantum wells in the unit supercell

We study the formation of a superradiant optical mode in the room temperature reflection spectra from resonant Bragg structures (RBSs) composed of single and double (In,Ga)N quantum wells (QWs) in the unit cell. The appearance of the mode manifests itself by a significant increase in the resonant optical reflectivity due to the electromagnetic coupling of quasi-two-dimensional excitons in the QWs. The implementation of the supercells with double (In,Ga)N QWs results in an increase in the oscillator strength of the quasi-2D excitons and corresponding rise of the radiative broadening parameter to the value as high as 0.3 ± 0.02 meV. We also show that the supercells with double QWs are preferable for RBS with large number of periods due to better tolerance to deviations from the exact periodicity.

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Publication Details

Journal
Applied Physics Letters
Published
2024-11-04
DOI
https://doi.org/10.1063/5.0233600
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
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article

(In,Ga)N-GaN resonant Bragg structures with single and double quantum wells in the unit supercell

W. V. Lundin, V. V. Chaldyshev, A. F. Tsatsul’nikov, E. E. Zavarin et al.
Applied Physics Letters
GaN-based semiconductor devices and materials
article

(In,Ga)N-GaN resonant Bragg structures with single and double quantum wells in the unit supercell

W. V. Lundin, V. V. Chaldyshev, A. F. Tsatsul’nikov, E. E. Zavarin, A. А. Ivanov, A. V. Sakharov
article en

Abstract

We study the formation of a superradiant optical mode in the room temperature reflection spectra from resonant Bragg structures (RBSs) composed of single and double (In,Ga)N quantum wells (QWs) in the unit cell. The appearance of the mode manifests itself by a significant increase in the resonant optical reflectivity due to the electromagnetic coupling of quasi-two-dimensional excitons in the QWs. The implementation of the supercells with double (In,Ga)N QWs results in an increase in the oscillator strength of the quasi-2D excitons and corresponding rise of the radiative broadening parameter to the value as high as 0.3 ± 0.02 meV. We also show that the supercells with double QWs are preferable for RBS with large number of periods due to better tolerance to deviations from the exact periodicity.

Applied Physics LettersVol. 125(19)
Submicron Heterostructures for Microelectronics Research and Engineering Center (RU), Ioffe Institute (RU)
Affordable and clean energy
Openalex Percentile: Top 88%
GaN-based semiconductor devices and materials
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(In,Ga)N-GaN resonant Bragg structures with single and double quantum wells in the unit supercell — W. V. Lundin, V. V. Chaldyshev, et al. · Applied Physics Letters (2024) | TGRS Research Map | TGRS