Achieving nearly barrier free transport in high mobility ReS2 phototransistors with van der Waals contacts

Focusing on Rhenium disulfide (ReS2), a group VII transition metal di-chalcogenides (TMDC), being a promising contender system for future nanoelectronics and optoelectronics, here, we present an innovative pathway to experimentally achieve an almost barrier-free contact for the ReS2 field effect transistors (FETs) by using few layered graphene as contact electrodes, further supported by comparative first-principles analysis. Such barrier-free contacts enable the observation of metal-to-insulator transition with enhanced room temperature carrier mobility up to 25 cm2/Vs, linear Ids-Vds characteristic down to 80 K, along with the reduction of 1/f noise by more than two orders of magnitude. We further demonstrate a highly responsive gate- tunable phototransistor (R > 106 A/W) at an illumination wavelength of 633 nm. This work demonstrates a straightforward strategy to unlock the full potential of ReS2 for CMOS compatible future electronic and optoelectronic devices.

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Publication Details

Journal
npj 2D Materials and Applications
Published
2024-11-05
DOI
https://doi.org/10.1038/s41699-024-00507-3
Citations
14
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
1.64

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article

Achieving nearly barrier free transport in high mobility ReS2 phototransistors with van der Waals contacts

Shubhrasish Mukherjee, Md. Nur Hasan, A. Thamizhavel, Ruta Kulkarni et al.
14 citations
npj 2D Materials and Applications
2D Materials and Applications
1.64
article

Achieving nearly barrier free transport in high mobility ReS2 phototransistors with van der Waals contacts

Shubhrasish Mukherjee, Md. Nur Hasan, A. Thamizhavel, Ruta Kulkarni, Gautam Samanta, Takashi Taniguchi, Kenji Watanabe, Shubhadip Moulick, Debjani Karmakar, Atindra Nath Pal
article en
14 citations

Abstract

Focusing on Rhenium disulfide (ReS2), a group VII transition metal di-chalcogenides (TMDC), being a promising contender system for future nanoelectronics and optoelectronics, here, we present an innovative pathway to experimentally achieve an almost barrier-free contact for the ReS2 field effect transistors (FETs) by using few layered graphene as contact electrodes, further supported by comparative first-principles analysis. Such barrier-free contacts enable the observation of metal-to-insulator transition with enhanced room temperature carrier mobility up to 25 cm2/Vs, linear Ids-Vds characteristic down to 80 K, along with the reduction of 1/f noise by more than two orders of magnitude. We further demonstrate a highly responsive gate- tunable phototransistor (R > 106 A/W) at an illumination wavelength of 633 nm. This work demonstrates a straightforward strategy to unlock the full potential of ReS2 for CMOS compatible future electronic and optoelectronic devices.

npj 2D Materials and ApplicationsVol. 8(1)
Tata Institute of Fundamental Research (IN), Uppsala University (SE), Bhabha Atomic Research Centre (IN), Homi Bhabha National Institute (IN), National Institute for Materials Science (JP), S.N. Bose National Centre for Basic Sciences (IN)
Department of Science and Technology, Ministry of Science and Technology, India, Ministry of Education, Culture, Sports, Science and Technology, Japan Society for the Promotion of Science, Bhabha Atomic Research Centre, Mission on Nano Science and Technology
Affordable and clean energy
Openalex Percentile: Top 12%
2D Materials and Applications
1.64
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