Study on the Mechanism of Bubble Defects in the PECVD Amorphous Silicon Films on Dielectric Substrate

The amorphous silicon (a-Si) grown by plasma enhanced chemical vapor deposition (PECVD) has been widely applied in advanced semiconductor devices. However, it still suffers from the bubble defects when the deposition temperature goes above 450 °C. In this work, we have investigated the influence of underlying materials on the formation of bubbles of a-Si. The a-Si was deposited on different dielectric substrates, including silicon nitrides (SiN) and silicon dioxide (SiO 2 ), using PECVD technique at a substrate temperature of 500 °C. A large number of bubbles of the a-Si has been observed on the thermal ALD deposited SiN underlayer, and some of them even burst. In contrast, no bubble defects were observed at the a-Si grown on PECVD SiN and PECVD SiO 2 films. Such deviation may be attributed to the quality of the underlying material, which induces the H/H 2 diffusion during the growth of a-Si and results in bubbles. A solution based on the model has been used to suppress the formation of such bubbles. An inserting layer of SiO 2 was introduced in between SiN and a-Si to improve the density of the lower layer material and the adhesion between the two materials. As a result, there is no bubble defects at the surface of a-Si observed using optical microscope. Our work reveals the mechanism of the formation of bubble defects and paves a new method to eliminate the bubbles defects and to form high-quality a-Si, which shows potential in the manufacture of semiconductor devices.