Effect of Iodine Doped Pentacene Thin Film on the Performance of Organic Light Emitting Diode

The study investigated the effect of iodine-doped pentacene film as a buffer layer in an organic light-emitting diode (OLED). In this study, an ITO (indium tin oxide)-based sample is used as a reference device for comparative purposes. In OLED devices, the buffer layers were deposited using the doping of iodine vapor with the pentacene materials under proper conditions. The thermal treatment of the doped pentacene film results in increasing the conductivity of the buffer layer. Surface morphology for the bilayer anode was carried out by FESEM (Field Emission Scanning Electron Microscope) analysis. In our work, maximum luminance of 2345 cd/m 2 and current efficiency of 5.4 cd/A are obtained, along with more stability performance under annealing treatment in the device structure of FTO/iodine-doped pentacene (30 nm)/TPD [N, N′-Bis(3-methyl phenyl)-N, N′-diphenylbenzidine] (44 nm)/Alq3 [Tris(8-hydroxyquinoline)aluminum(III)] (52 nm)/LiF (lithium fluoride) (5 nm)/Al (aluminum) (110 nm).