A 8Gb/s PAM-4/NRZ Dual-Mode Transmitter for Panel Interfaces with Run-length Limited Maximum Transition

This paper presents a 8Gb/s four-level pulse amplitude modulation (PAM-4) /non-return-to-zero (NRZ) dual-mode transmitter. The transmitter implements a 8B/5S PAM-4 run-length limited maximum transition avoidance (RLL-MTA) encoding method for panel interfaces. RLL-MTA encoding eliminates maximum transitions and restricts run-length to 4 to reduce DC wander in PAM-4 signaling, which is employed in the clock data recovery (CDR) used on the receiver. The transmitter utilizes a 4-tap feedforward equalizer (FFE) for NRZ and a 2-tap FFE for PAM-4. Implemented in 28nm CMOS technology, the transmitter occupies a 0.0506mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> active area and exhibits power efficiency, with 2.17pJ/b for PAM-4 and 3.23pJ/b for NRZ.

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Published
2024-09-16
DOI
https://doi.org/10.1109/socc62300.2024.10737837
Citations
1
Primary Topic
Semiconductor Lasers and Optical Devices
Type
article
Field-Weighted Citation Impact
0.21

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article

A 8Gb/s PAM-4/NRZ Dual-Mode Transmitter for Panel Interfaces with Run-length Limited Maximum Transition

Yong-Un Jeong, Younghwan Chang, Suhwan Kim, Goeun Kim
1 citations
Semiconductor Lasers and Optical Devices
0.21
article

A 8Gb/s PAM-4/NRZ Dual-Mode Transmitter for Panel Interfaces with Run-length Limited Maximum Transition

Yong-Un Jeong, Younghwan Chang, Suhwan Kim, Goeun Kim
article en
1 citations

Abstract

This paper presents a 8Gb/s four-level pulse amplitude modulation (PAM-4) /non-return-to-zero (NRZ) dual-mode transmitter. The transmitter implements a 8B/5S PAM-4 run-length limited maximum transition avoidance (RLL-MTA) encoding method for panel interfaces. RLL-MTA encoding eliminates maximum transitions and restricts run-length to 4 to reduce DC wander in PAM-4 signaling, which is employed in the clock data recovery (CDR) used on the receiver. The transmitter utilizes a 4-tap feedforward equalizer (FFE) for NRZ and a 2-tap FFE for PAM-4. Implemented in 28nm CMOS technology, the transmitter occupies a 0.0506mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> active area and exhibits power efficiency, with 2.17pJ/b for PAM-4 and 3.23pJ/b for NRZ.

Seoul National University (KR), Samsung (South Korea) (KR), Sejong University (KR)
Samsung
Affordable and clean energy
Openalex Percentile: Top 46%
Semiconductor Lasers and Optical Devices
0.21
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A 8Gb/s PAM-4/NRZ Dual-Mode Transmitter for Panel Interfaces with Run-length Limited Maximum Transition — Yong-Un Jeong, Younghwan Chang, et al. · (2024) | TGRS Research Map | TGRS