Structural and Electrical Characterization of Solution‐Deposited β‐Ga₂O₃:Al

The wide bandgap oxide semiconductor thin films are synthesized using tetrahydroxogallate (III) ammonium {NH 4 Ga(OH) 4 } precursor at a concentration of 10 at% Ga and varying amounts of hydrated aluminum nitrate between 0.6 and 3.2 at%. Thin films of β‐Ga 2 O 3 :Al are synthesized by spin coating and spray pyrolysis with postannealing in nitrogen ambient at 930 °C. The structural properties of the thin films are investigated using XRD and Raman spectroscopy, while the electrical characteristics are determined using 4‐point probe, current–voltage ( I–V ), and capacitance–voltage ( C–V ) measurements with Ti/Al/Ni/Au Ohmic contacts and Pd/Au Schottky contacts. The β‐Ga 2 O 3 with 2.2 at% Al is found to be the optimal concentration in this study, resulting in ideality factors of 1.10 and 1.09, saturation currents of 3.17 × 10 −6 and 3.10 × 10 −6 A, Schottky barrier heights of 0.73 and 0.88 eV, and series resistances of 948 and 955 Ω, for the spin‐coated and pyrolytically sprayed samples respectively.