Synergistic Suppression of Bipolar Effect and Lattice Thermal Conductivity Leading to High Average Figure of Merit in Bi<sub>0.4</sub>Sb<sub>1.6</sub>Te<sub>3</sub> Materials through Alloying with AgSbTe<sub>2</sub>

Bismuth telluride-based materials have been widely used in commercial thermoelectric applications due to their excellent thermoelectric performance in the near-room-temperature range, yet further improvement of their thermoelectric properties is still necessary. Moreover, the narrow band gap of these materials results in a bipolar effect at elevated temperatures, which causes severe degradation of the thermoelectric performance. In this work, the commercial Bi<sub>0.4</sub>Sb<sub>1.6</sub>Te<sub>3</sub> was alloyed with AgSbTe<sub>2</sub> by using high-energy ball milling method combined with spark plasma sintering. It was found that ball milling can effectively reduce the lattice thermal conductivity of the samples. The alloying of AgSbTe<sub>2</sub> leads to a gradual increase in hole carrier concentration, resulting in an enhanced electrical conductivity and optimized power factor. Additionally, the bipolar effect is also weakened due to the increased hole carrier concentration. Furthermore, the substitution of Ag in the Bi/Sb sublattice causes further reduction in the lattice thermal conductivity. Ultimately, the sample alloyed with 0.15 wt % AgSbTe<sub>2</sub> demonstrates its best thermoelectric performance with a maximum <i>zT</i> of 1.35 at 393 K, showing a 20.5% improvement compared to the commercial sample. Besides, its average <i>zT</i> reaches a high value of 1.25 between 303 and 483 K, with a 27.6% improvement compared to that of the commercial sample.

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Publication Details

Journal
ACS Applied Materials & Interfaces
Published
2024-11-04
DOI
https://doi.org/10.1021/acsami.4c12307
Citations
12
Primary Topic
Advanced Thermoelectric Materials and Devices
Type
article
Field-Weighted Citation Impact
1.41

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article

Synergistic Suppression of Bipolar Effect and Lattice Thermal Conductivity Leading to High Average Figure of Merit in Bi0.4Sb1.6Te3 Materials through Alloying with AgSbTe2

Zhiquan Chen, N. D. Qi, Xiangbin Chen, Xiang Qu et al.
12 citations
ACS Applied Materials & Interfaces
Advanced Thermoelectric Materials and Devices
1.41
article

Synergistic Suppression of Bipolar Effect and Lattice Thermal Conductivity Leading to High Average Figure of Merit in Bi0.4Sb1.6Te3 Materials through Alloying with AgSbTe2

Zhiquan Chen, N. D. Qi, Xiangbin Chen, Xiang Qu, Yu Tian
article en
12 citations

Abstract

Bismuth telluride-based materials have been widely used in commercial thermoelectric applications due to their excellent thermoelectric performance in the near-room-temperature range, yet further improvement of their thermoelectric properties is still necessary. Moreover, the narrow band gap of these materials results in a bipolar effect at elevated temperatures, which causes severe degradation of the thermoelectric performance. In this work, the commercial Bi<sub>0.4</sub>Sb<sub>1.6</sub>Te<sub>3</sub> was alloyed with AgSbTe<sub>2</sub> by using high-energy ball milling method combined with spark plasma sintering. It was found that ball milling can effectively reduce the lattice thermal conductivity of the samples. The alloying of AgSbTe<sub>2</sub> leads to a gradual increase in hole carrier concentration, resulting in an enhanced electrical conductivity and optimized power factor. Additionally, the bipolar effect is also weakened due to the increased hole carrier concentration. Furthermore, the substitution of Ag in the Bi/Sb sublattice causes further reduction in the lattice thermal conductivity. Ultimately, the sample alloyed with 0.15 wt % AgSbTe<sub>2</sub> demonstrates its best thermoelectric performance with a maximum <i>zT</i> of 1.35 at 393 K, showing a 20.5% improvement compared to the commercial sample. Besides, its average <i>zT</i> reaches a high value of 1.25 between 303 and 483 K, with a 27.6% improvement compared to that of the commercial sample.

ACS Applied Materials & InterfacesVol. 16(45)
Wuhan University (CN)
National Natural Science Foundation of China, National Key Research and Development Program of China
Openalex Percentile: Top 15%
Advanced Thermoelectric Materials and Devices
1.41
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