Design of Concurrent Dual Band Low Noise Amplifier for WLAN Applications

This paper presents a dual band LNA CMOS designed for a Wireless Local Area Network (WLAN) application using CMOS 0.13-µm Silterra technology. The proposed design incorporates forward body bias technique with cascode and notch filter configuration to achieve both low power consumption and high gain. The simulation results demonstrate a total power consumption of 2.39 mW at a low supply voltage of 0.5 V, with a gain of 16 dB at 2.4 GHz and 12 dB at 5.2 GHz. Additionally, input return loss of -12.3 dB and -14.2 dB with noise figures of 2.93 dBm and 4.23 dBm were obtained at 2.4 GHz and 5.2 GHz, respectively. Overall, this research contributes to the development of dual band LNA designs for WLAN applications.

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Publication Details

Journal
Journal of Advanced Research in Applied Sciences and Engineering Technology
Published
2024-10-09
DOI
https://doi.org/10.37934/araset.63.1.146152
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
Field-Weighted Citation Impact
0.00

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article

Design of Concurrent Dual Band Low Noise Amplifier for WLAN Applications

Asrulnizam Abd Manaf, Ahmad Fariz Hasan, Anishaziela Azizan, Prapto Nugroho et al.
Journal of Advanced Research in Applied Sciences and Engineering Technology
Radio Frequency Integrated Circuit Design
article

Design of Concurrent Dual Band Low Noise Amplifier for WLAN Applications

Asrulnizam Abd Manaf, Ahmad Fariz Hasan, Anishaziela Azizan, Prapto Nugroho, Sohiful Anuar Zainol Murad
article en

Abstract

This paper presents a dual band LNA CMOS designed for a Wireless Local Area Network (WLAN) application using CMOS 0.13-µm Silterra technology. The proposed design incorporates forward body bias technique with cascode and notch filter configuration to achieve both low power consumption and high gain. The simulation results demonstrate a total power consumption of 2.39 mW at a low supply voltage of 0.5 V, with a gain of 16 dB at 2.4 GHz and 12 dB at 5.2 GHz. Additionally, input return loss of -12.3 dB and -14.2 dB with noise figures of 2.93 dBm and 4.23 dBm were obtained at 2.4 GHz and 5.2 GHz, respectively. Overall, this research contributes to the development of dual band LNA designs for WLAN applications.

Journal of Advanced Research in Applied Sciences and Engineering Technology
Universiti Sains Malaysia (MY), Universitas Gadjah Mada (ID), Universiti Malaysia Perlis (MY)
Universiti Malaysia Perlis
Openalex Percentile: Top 83%
Radio Frequency Integrated Circuit Design
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Design of Concurrent Dual Band Low Noise Amplifier for WLAN Applications — Asrulnizam Abd Manaf, Ahmad Fariz Hasan, et al. · Journal of Advanced Research in Applied Sciences and Engineering Technology (2024) | TGRS Research Map | TGRS