Germanium surface segregation in highly doped Ge:β-Ga2O3 grown by molecular beam epitaxy observed by synchrotron radiation hard x-ray photoelectron spectroscopy
We present a study of Ge segregation at the surface of highly germanium-doped gallium oxide (2.5 × 1020 cm−3 nominal doping level) grown by molecular beam epitaxy. We probed the dopant concentration as a function of depth by hard x-ray photoelectron spectroscopy and standard laboratory photoemission spectroscopy. We notably found that there is germanium segregation within the top 2 nm where its concentration is 3 times the nominal doping level. This increased dopant concentration leads to a threefold enhancement of surface conductivity. The results suggest a reliable method for delta doping for power electronics applications.
Authors
- Anthony Boucly (ORCID: https://orcid.org/0000-0003-1436-3462)
- Thaddeus J. Asel (ORCID: https://orcid.org/0000-0003-1229-6286)
- Brenton A. Noesges (ORCID: https://orcid.org/0000-0002-5650-4625)
- Conan Weiland (ORCID: https://orcid.org/0000-0001-6808-1941)
- N. Barrett (ORCID: https://orcid.org/0000-0002-8228-0805)
- Tyson C. Back (ORCID: https://orcid.org/0000-0002-5003-7640)
- Prescott E. Evans (ORCID: https://orcid.org/0000-0001-7653-2976)
Institutions
- Centre National de la Recherche Scientifique (FR)
- National Institute of Standards and Technology (US)
- Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR)
- Université Paris-Saclay (FR)
- Wright-Patterson Air Force Base (US)
- Azimuth (United States) (US)
- CEA Paris-Saclay (FR)
- Material Measurement Laboratory (US)
- U.S. Air Force Research Laboratory Materials and Manufacturing Directorate
Publication Details
- Journal
- Applied Physics Letters
- Published
- 2024-11-04
- DOI
- https://doi.org/10.1063/5.0220212
- Citations
- 5
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.59
Funders
- Air Force Office of Scientific Research