Mimicking somatic behavior of neurons using the integrate and fire model of 2D SnS memristive switching characteristics

This Letter presents the fabrication and characterization of a 2D SnS memristor, proposing its integrate and fire (I&F) model as a potential hardware implementation of neuronal somatic behavior. The memristor comprises a thin layer of tin (II) sulfide (SnS) sandwiched between copper (Cu) electrodes on a silicon (Si) substrate. This structure exhibits an impressive Roff:Ron ratio of 103 at a read voltage Vrd of 0.25 V with exceptionally low switching Vsw and set Vset voltages of 0.3 and 0.35 V, respectively, with ∼3 order variation between the maximum Rmax and Rmin resistances offered during single voltage sweep cycle. We have explained the memristive behavior using the dual ionic conduction mechanism in the SnS active layer. We extracted the real-time band diagram of SnS using ultraviolet photoelectron spectroscopy, explaining the low Vsw observed. We propose that the emulation of the I&F artificial neuron model exhibited by the fabricated device could serve as a promising application in the field of artificial neuron spiking.