Hybrid Functional ITO/Silver Nanowire Transparent Conductive Electrodes for Enhanced Output Efficiency of Ultraviolet GaN-Based Light-Emitting Diodes

We investigated hybrid functional transparent conductive electrodes (HFTCEs) composed of indium-tin-oxide (ITO) and silver nanowires (AgNWs) for the enhancement of output efficiency in GaN-based ultraviolet light-emitting diodes (UVLEDs). The HFTCEs demonstrated an optical transmittance of 69.5% at a wavelength of 380 nm and a sheet resistance of 16.4 Ω/sq, while the reference ITO TCE exhibited a transmittance of 76.4% and a sheet resistance of 18.7 Ω/sq. Despite the 8.9% lower optical transmittance, the UVLEDs fabricated with HFTCEs achieved a 25% increase in output efficiency compared to reference UVLEDs. This improvement is attributed to the HFTCE's twofold longer current spreading length under operating forward voltages, and more significantly, the enhanced out-coupling of localized surface plasmon (LSP) resonance with the trapped wave-guided light modes.

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Publication Details

Journal
Materials
Published
2024-11-04
DOI
https://doi.org/10.3390/ma17215385
Citations
1
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.31

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article

Hybrid Functional ITO/Silver Nanowire Transparent Conductive Electrodes for Enhanced Output Efficiency of Ultraviolet GaN-Based Light-Emitting Diodes

Jaehee Cho, Mun Seok Jeong, Hyunsoo Kim, Munsik Oh
1 citations
Materials
GaN-based semiconductor devices and materials
0.31
article

Hybrid Functional ITO/Silver Nanowire Transparent Conductive Electrodes for Enhanced Output Efficiency of Ultraviolet GaN-Based Light-Emitting Diodes

Jaehee Cho, Mun Seok Jeong, Hyunsoo Kim, Munsik Oh
article en
1 citations

Abstract

We investigated hybrid functional transparent conductive electrodes (HFTCEs) composed of indium-tin-oxide (ITO) and silver nanowires (AgNWs) for the enhancement of output efficiency in GaN-based ultraviolet light-emitting diodes (UVLEDs). The HFTCEs demonstrated an optical transmittance of 69.5% at a wavelength of 380 nm and a sheet resistance of 16.4 Ω/sq, while the reference ITO TCE exhibited a transmittance of 76.4% and a sheet resistance of 18.7 Ω/sq. Despite the 8.9% lower optical transmittance, the UVLEDs fabricated with HFTCEs achieved a 25% increase in output efficiency compared to reference UVLEDs. This improvement is attributed to the HFTCE's twofold longer current spreading length under operating forward voltages, and more significantly, the enhanced out-coupling of localized surface plasmon (LSP) resonance with the trapped wave-guided light modes.

MaterialsVol. 17(21)
Hanyang University (KR), Jeonbuk National University (KR)
National Research Foundation, National Research Foundation of Korea
Affordable and clean energy
Openalex Percentile: Top 42%
GaN-based semiconductor devices and materials
0.31
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