Near-Field Radiation of Millimeter Wave Power Amplifier
With the development of advanced packaging, electromagnetic interference from monolithic microwave integrated circuits (MMIC) has emerged as a significant noise source impacting electronic system stability. However, there is little work reported yet. To calculate the electromagnetic field distribution above this work proposes a linear superposition method to represent the non-linear response of a transistor using harmonic power sources. The results by using a GaN millimeter wave power amplifier MMIC show that the proposed method can capture the near-field electromagnetic field characteristics while maintaining good accuracy in predicting nonlinear performance, The results of the work are useful for compact electronic system optimization.
Authors
- Bin Kong (ORCID: https://orcid.org/0000-0001-7842-0169)
- Chenxi Li (ORCID: https://orcid.org/0000-0002-1082-851X)
- Yunqiu Wu (ORCID: https://orcid.org/0000-0001-6856-7431)
- Yuehang Xu
- Min Tang (ORCID: https://orcid.org/0000-0002-0716-912X)
- Qingzhi Wu
- Ruimin Xu
Institutions
- University of Electronic Science and Technology of China (CN)
- Shanghai Jiao Tong University (CN)
Publication Details
- Published
- 2024-08-21
- DOI
- https://doi.org/10.1109/ucmmt62975.2024.10737720
- Primary Topic
- Microwave Engineering and Waveguides
- Type
- article
- Field-Weighted Citation Impact
- 0.00