Impact of Temperature and Noise on Gallium Nitride Junctionless Accumulation Mode Nanowire FET (GaN-JAMNWFET)

This work analyzes the temperature and noise impact on the Gallium Nitride Junctionless Accumulation Mode Nanowire FET (GaN-JAMNWFET). The objective of this work is to examine the characteristics of the GaN-JAMNWFET, focusing on parameters such as drain current, transconductance, subthreshold swing, output conductance, cutoff frequency, Unilateral Power Gain (UPG), Maximum Transducer Power Gain (MTPG), Noise Figure (NF), and Noise Conductance (NC) at different temperatures (T=300K, 400K and 500K). GaN-based devices offer enhanced analog performance and are well-suited for high-frequency applications due to their larger bandgap and robust breakdown field, enabling them to handle higher voltages and powers. Also, the reported structure exhibits superior performance compared to GaN-based Junctionless (JL) Nanowire FET.