Parametric Comparison of Linear-ion Drift and VTEAM Models

Memristors, as a new electronic component, have unique properties such as non-volatile memory and a unique pinched hysteresis loop in their voltage-current characteristics. However, precisely simulating the nonlinear ion drift dynamics of memristor presents a substantial challenge. These devices are well-known for their non-volatile applications because of the pinched hysteresis loop with non-linear behavior. This paper outlines the I-V characteristics of the linear-ion drift model and VTEAM models by changing the frequency and voltage parameters. By observing the acquired results, in the linear-ion drift model, it is extremely difficult to generate a non-linear i-v curve while retaining memristance behaviour at high frequency and voltage ranges. The reason for this drawback could be due to the lack of threshold value in this model. So, to address this issue while maintaining the PHL (Pinched hysteresis loop) at a specific threshold level, the VTEAM model was implemented.