Small, Economical and Power dense C-Band 350 W Pulsed Power Amplifier

High-power Gallium nitride transistor-based amplifiers are used in more applications than tube-based solutions. This solid-state amplifier technology was used to develop a high-power and cost-effective amplifier module. Different radio frequency parameters were measured to characterise the module. The performance matched the expected levels. This new, higher-performance amplifier module can be used in various transmitter and testing applications.

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Publication Details

Published
2024-10-02
DOI
https://doi.org/10.1109/bec61458.2024.10737969
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
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article

Small, Economical and Power dense C-Band 350 W Pulsed Power Amplifier

Veiko Dieves, Alvo Aabloo, Jaanus Kalde, Kalle-Gustav Kruus et al.
GaN-based semiconductor devices and materials
article

Small, Economical and Power dense C-Band 350 W Pulsed Power Amplifier

Veiko Dieves, Alvo Aabloo, Jaanus Kalde, Kalle-Gustav Kruus, Erik Amor
article en

Abstract

High-power Gallium nitride transistor-based amplifiers are used in more applications than tube-based solutions. This solid-state amplifier technology was used to develop a high-power and cost-effective amplifier module. Different radio frequency parameters were measured to characterise the module. The performance matched the expected levels. This new, higher-performance amplifier module can be used in various transmitter and testing applications.

Estonian National Defense College (EE), University of Tartu (EE)
Affordable and clean energy
Openalex Percentile: Top 88%
GaN-based semiconductor devices and materials
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