Metal-Gate/High-k CGAA FET with Strain-engineering for both high speed switching and low-power applications

A novel n-type nanowire cylindrical gate-all-around field-effect transistor (n-CGAA FET) with a strained channel and enhanced high-κ metal gates (HKMGs) aims to move beyond the 2 nm technological node. The strained channel in the n-CGAA FET is built with strain-SiGe encased in a strained silicon structure, as well as a tungsten gate and a high-k gate stack, which replace the traditional polysilicon gate and silicon channel. This novel architecture provides excellent control over short-channel effects. In addition, a comprehensive examination of device performance is performed and presented. The proposed integration technique shows great promise for use in high-speed, low-power devices.