A Hf0.5Zr0.5O2 non-volatile capacitor based on SrTiO3 substrate

The rapid of development of the Internet of Things (Iot), 5G communications, and smart technologies placing higher demands on storage-integrated hardware devices. The discovery of HfO₂-based ferroelectric materials has opened up a new avenue for achieving low-power logic and high-density non-volatile memory by utilizing this silicon-tolerant ferroelectric material. In this work, a 10 nm Hf_0.5Zr_0.5O₂ (HZO) ferroelectric films ware prepared on SrTiO₃ (STO) substrate using an atomic layer deposition system (ALD). After rapid annealing treatment, the surface roughness of HZO films showed nanometer level (Ra~1.033 nm, Rq~1.321 nm). HZO ferroelectric films with molybdenum (Mo) electrodes exhibit low coercive field (Ec~1.48 MV/cm) and excellent ferroelectric property (2Pr~56.143 µC/cm2 , and 2Pmax~ 81.070 µC/cm²). Under the fatigue signal of 100 kHz, the device exhibits stable anti-fatigue characteristics. Mo/HZO/Mo/STO devices exhibit fast response time (1ms) and stable polarization retention characteristics (over 10³ s). This work introduces a novel method for the next-generation non-volatile memory solutions (NVM).