Design and optimization of two-terminal InGaP/Si tandem solar cell through numerical simulation

Abstract The III-V/Si double junction solar cells demonstrate cost-effective performance comparable to III-V/III-V tandems, with an efficiency of 35.9%, below the 43% theoretical limit. Considering monolithic InGaP//Si based tandem solar cell, this work dealt with the optimization of its efficiency as a function of layer thicknesses and dopings. Considering ideal optoelectronic parameters of materials, numerical simulations were performed by using Silvaco/ATLAS TCAD software. They were conducted within the context of a multi-step optimization procedure that was proposed in this work. The obtained optimum tandem InGaP//Si structure reached an unprecedented power conversion efficiency of 40.74% under 1.5G spectrum.