Introducing boron gallium nitride as carriers’ source layer for efficient near-ultraviolet microLED

Abstract This study explored the impact of boron gallium nitride (BGaN) in buffer layer and hole source layer. We employed B 0.05 Ga 0.95 N which reduced the lattice mismatch as well as the electric field. BGaN not only minimized the number of electrons leaking out of quantum wells (QWs) but also improved the hole injection. It is evident from our simulations that internal quantum efficiency (IQE) is enhanced significantly as more carriers are available for radiative recombination in multiple quantum wells (MQWs). Along with the increase in IQE, droop is also reduced in BGaN ultraviolet light-emitting diodes. Significantly high luminous power and emission intensity were observed along with slight blueshift because of minimized quantum confinement stark effect (QCSE).