High-quality silicon-based perovskite photodetectors with the detectivity exceeding 7.5 × 10¹³ Jones

Considering the advantages of silicon-based microelectronic devices and the excellent photophysical properties of halide perovskites, silicon-based perovskites are expected to demonstrate great potential for application in the field of optoelectronic devices. In this paper, an antisolvent-assisted strategy is used to prepare MAPbBr 3 perovskite microcrystals on silicon substrates, and dense, continuous, and smooth perovskite microcrystal thick films are further obtained after the hot-press treatment. Finally, an n-Si/perovskite thick film/carbon structure device is constructed which shows excellent photoresponsive performance with a responsivity of 11.7 A/W, a detectivity of 7.57 × 10 13 Jones, and a linear dynamic range of 147 dB at 405 nm with a 0.5 V bias. Moreover, the device can respond to the light with its light intensity of as low as 2.14 × 10 −6 mW cm −2 , demonstrating excellent weak-light detection performance. This integration of silicon with the halide perovskites shows tremendous potential for applications in the field of semiconductor devices.