High-Throughput Spectroscopy of Geometry-Tunable Arrays of Axial InGaAs Nanowire Heterostructures with Twin-Induced Carrier Confinement

Predicting the optical properties of large-scale ensembles of luminescent nanowire arrays that host active quantum heterostructures is of paramount interest for on-chip integrated photonic and quantum photonic devices. However, this has remained challenging due to the vast geometrical parameter space and variations at the single object level. Here, we demonstrate high-throughput spectroscopy on 16800 individual InGaAs quantum heterostructures grown by site-selective epitaxy on silicon, with varying geometrical parameters to assess uniformity/yield in luminescence efficiency, and emission energy trends. The luminescence uniformity/yield enhances significantly at prepatterned array mask opening diameters (<i>d</i>₀) greater than 50 nm. Additionally, the emission energy exhibits anomalous behavior with respect to <i>d</i>₀, which is notably attributed to rotational twinning within the InGaAs region, inducing significant energy shifts due to quantum confinement effects. These findings provide useful insights for mapping and optimizing the interdependencies between geometrical parameters and electronic/optical properties of widely tunable sets of quantum nanowire heterostructures.