Cu <sub>2</sub> O/Ga <sub>2</sub> O <sub>3</sub> pn-junction photodetector with low dark current and high detectivity

This article combines Cu 2 O and a-Ga 2 O 3 to form a heterojunction, achieving low dark current and high detectivity of photodetectors.

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Institutions

Publication Details

Journal
Journal of Materials Chemistry C
Published
2024-11-04
DOI
https://doi.org/10.1039/d4tc04165h
Citations
4
Primary Topic
Ga2O3 and related materials
Type
article
Field-Weighted Citation Impact
0.47
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article

Cu 2 O/Ga 2 O 3 pn-junction photodetector with low dark current and high detectivity

Dayong Jiang, Man Zhao, Mingyang Li
4 citations
Journal of Materials Chemistry C
Ga2O3 and related materials
0.47
article

Cu 2 O/Ga 2 O 3 pn-junction photodetector with low dark current and high detectivity

Dayong Jiang, Man Zhao, Mingyang Li
article en
4 citations

Abstract

This article combines Cu 2 O and a-Ga 2 O 3 to form a heterojunction, achieving low dark current and high detectivity of photodetectors.

Journal of Materials Chemistry CVol. 13(2)
Changchun University of Science and Technology (CN)
Openalex Percentile: Top 44%
Ga2O3 and related materials
0.47
DOISourceOpenAlex
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Cu <sub>2</sub> O/Ga <sub>2</sub> O <sub>3</sub> pn-junction photodetector with low dark current and high detectivity — Dayong Jiang, Man Zhao, et al. · Journal of Materials Chemistry C (2024) | TGRS Research Map | TGRS